Lattice-strain control of magnetoresistivity and magnetoresistive anisotropy induced by ion-beam milling in La0.65Ca0.35MnO3 films near the metal-insulator transition

Abstract

The lattice-disorder-induced changes in the magnetoresistivity and the magnetoresistive anisotropy of epitaxial ion-beam-milled La0.65Ca0.35MnO3 films were investigated. The results suggest that, for films less than 20nm thick, an increase of the magnetoresistivity and a reduction in the magnetoresistive anisotropy of the ion-beam-milled films are governed mostly by the point-defect-induced deformation, in contrast to the as-grown films where an increase of both the magnetoresistivity and the magnetoresistive anisotropy is determined by the epitaxial strain.