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Radiative recombination in PbTe quantum wells
16
Citations
10
References
1989
Year
SemiconductorsSemiconductor TechnologyCategoryquantum ElectronicsPhotoluminescenceEngineeringPhysicsPbte WellsQuantum DeviceOptoelectronic MaterialsApplied PhysicsQuantum MaterialsInfrared Upconversion MethodQuantum DevicesOptoelectronic DevicesRecombination RateCompound SemiconductorPbte Quantum WellsSemiconductor Nanostructures
Recombination of quasi-two-dimensional (2D) free-electron-hole pairs in PbTe/(Pb,Eu)Te multiple quantum wells has been studied in time-resolved photoluminescence experiments in the 4–5 μm region on subnanosecond scale by an infrared upconversion method. Over a finite temperature range, the recombination rate is seen to vary approximately as 1/T, as expected for a radiative process in a nondegenerate 2D carrier gas. A model is presented where the recombination is enhanced by the presence of a substantial background hole density in the PbTe wells, generated in a manner analogous to modulation doping.
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