Diffusion-induced disordering of Ga _0.47 In _0.53 As/InP multiple quantum wells with zinc

Abstract

Diffusing zinc into Ga0.47In0.53As/InP MQW layers is found to cause strong intermixing of the group III elements, which changes the composition in the quantum wells and barriers. As a result of this disordering the MQW bandgap is reduced in energy and the photoluminescence emission peak moves to longer wavelength.