Electronics Letters · 1988 · 28 citations · 3 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsDopingQuantum DotsQuantum WellsSemiconductor DefectsSemiconductor PhysicsWide Band Gap SemiconductorsCarrier Confinement In Quantum WellsCarrier Transport In Quantum WellsPhotoluminescencePhotoluminescence In Quantum WellsPhotoluminescence SpectroscopyQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well Structures
Diffusing zinc into Ga0.47In0.53As/InP MQW layers is found to cause strong intermixing of the group III elements, which changes the composition in the quantum wells and barriers. As a result of this disordering the MQW bandgap is reduced in energy and the photoluminescence emission peak moves to longer wavelength.
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An open tube method of Zn diffusion in III-V compounds
S. B. Phatak · IEEE Electron Device Letters · 1982 · 20 citations
Embedded-mirror semiconductor laser
W. D. Laidig, J. W. Lee, P. J. Caldwell · Applied Physics Letters · 1984 · 12 citations