Concepedia

Interface states and impurities in MOS structures with very thin tunneling barriers

P. Balk, L. Do Thanh, S. Ewert, Martin Kuball, Sebastian Schmitz

Applied Surface Science · 1987 · 13 citations · 10 references

DOI

Concepts

References

10

Physics of Semiconductor Devices

Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations

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The hydrogen content of plasma-deposited silicon nitride

W. A. Lanford, Myron J. Rand · Journal of Applied Physics · 1978 · 782 citations

, , +17

Vibrational absorption of carbon in silicon

R.C. Newman, J. B. Willis · Journal of Physics and Chemistry of Solids · 1965 · 245 citations

, , +12

Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si

S. Kar, Walter E. Dahlke · Solid-State Electronics · 1972 · 243 citations

, , +17

The structure of plasma-deposited silicon nitride films determined by infrared spectroscopy

W. R. Knolle, John Osenbach · Journal of Applied Physics · 1985 · 81 citations

, , +15