Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

TLDR

The paper proposes using carbon nanotubes as both device elements and interconnects to enable molecular-scale read/write operations. Each device employs a suspended, crossed nanotube geometry that yields bistable, electrostatically switchable ON/OFF states and can be addressed in large arrays via CNT molecular wires. The authors demonstrate that these reversible, bistable nanotube elements enable nonvolatile RAM and logic tables with ~10¹² elements cm⁻² density and >100 GHz operation, validated by calculations and an experimental reversible bit.

Abstract

A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 10(12) elements per square centimeter and an element operation frequency in excess of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.