Publication | Closed Access
Effect of Lattice Mismatch on the Solidus Compositions of Ga<sub>x</sub>In<sub>1-x</sub>P Liquid Phase Epitaxial Crystals
27
Citations
11
References
1983
Year
EngineeringCrystal Growth TechnologySemiconductorsQuantum MaterialsSolidus CompositionsMolecular Beam EpitaxyEpitaxial GrowthCrystal FormationCompound SemiconductorMaterials ScienceCrystalline DefectsCrystal MaterialSemiconductor MaterialGa XCrystallographyCondensed Matter PhysicsApplied PhysicsCrystalsLiquid Phase EpitaxyLattice Mismatch
Liquid phase epitaxy of Ga x In 1- x P on (100)-oriented GaAs and GaAs 0.8 P 0.2 substrates has been studied. Results indicate that the solidus compositions of Ga x In 1- x P on both substrates tend to be “locked” near the lattice matching composition. This “composition pulling” effect is shown to be consistent with a model that takes account of the contribution of lattice mismatch strain energy.
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