An electron microscopy investigation of the structure of porous silicon by oxide replication

Abstract

The morphology of porous silicon is studied by scanning electron microscopy (SEM) by making an oxide replica of the pore structure. Highly branched n-type porous silicon samples were prepared and a replica was formed by oxidation of the pores followed by selective removal of the silicon substrate to expose the oxide pores. Scanning and transmission electron microscopy images confirmed many previously held assumptions about porous silicon formation, including the fractal structure and crystallographic propagation; they also provided a clearer understanding of the details of pore formation. The replica procedure also provides a platform for a more facile and comprehensive analysis of the porous silicon morphology.