An RF Chipset for Impulse Radio UWB Using 0.13 μm InP-HEMT Technology

Yoichi Kawano, Yasuhiro Nakasha, Kaoru Yokoo, S. Masuda, Tsuyoshi Takahashi, Tatsuya Hirose, Yasuyuki Oishi, Kiyoshi Hamaguchi

2006 · 10 citations · 0 references

Concepts

Abstract

A novel ultra wideband impulse radio architecture for 24 GHz-band short-range radar was developed using 0.13 mum InP-HEMT technology. The transmitter part generates an extremely wide band impulse from a pulse generator and then filters it by using a band pass filter (BPF). The obtained impulse shows a bandwidth of over 40 GHz and achieves flatness in the target band. The power amplifier (PA) for the transmitter has a gain of 15 plusmn 0.05 dB, and the low noise amplifier (LNA) for the receiver has a gain of 40 plusmn 1 dB. The achieved flatness of the integration gain including the PA, LNA, and RF-switch is less than plusmn 1.1 dB. These RF circuits with gain flatness make possible a simple matched filter configuration without the use of a conventional correlator composed of a local oscillator