Monte Carlo calculations of electron transport in silicon and related effects for energies of 0.02–200 keV

Abstract

We present results of systematic Monte Carlo calculations of electron transport in silicon for the wide energy range of 0.02–200 keV, obtained in the frame of a single model using verified input data. The results include characteristics of electron transport, such as backscattering coefficients, ranges, transmission, and deposited-energy distributions, which are quantities of importance for electron-beam applications. The calculations of the spatial and temporal evolution of the electron-initiated cascades of secondary electrons yield a better understanding of the electron and ion track structures and related effects in silicon.