Improvement of the threshold current of AlGaAs/GaAs single quantum well lasers by substrate tilting

Abstract

We have grown AlGaAs/GaAs single quantum well lasers by molecular-beam epitaxy on differently misoriented substrates. The threshold current density was observed to be lower on the (511) orientation than the 4° off (100) orientation. We explain this result based on the fact that step-edge densities are different for differently oriented substrates.