Removal of phosphorus by the solidification refining with Si—Al melts

Abstract

To discuss the possibility of phosphorus removal from silicon by the solidification refining with Si—Al melts, the distribution of phosphorus between solid silicon and the liquid Si—Al alloy at 1173—1373 K was investigated. In the present study, the distribution of phosphorus was examined by the temperature gradient zone melting method, where a phosphorus containing molten Si—Al zone was passed through a single crystalline silicon phase. The segregation ratio of phosphorus at its infinite dilution was obtained as 0.12 (1373 K), 0.085 (1273 K) and 0.061 (1173 K), respectively, and the solidification refining with the Si—Al melts was found to be effective for the removal of phosphorus at lower temperature.