Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy

Abstract

The cross-sectional potential images of the GaAs/AlAs multiple quantum wells and InAlAs/InGaAs heterostructures have been successfully obtained by Kelvin probe force microscopy (KFM). It was shown that the smaller amplitude of the alternating voltage ( V ac ) applied to detect the electrostatic force during the KFM measurements gave a better potential profile of the heterostructures. The spatial resolution of the present KFM was investigated by measuring the InAlAs/InGaAs layered structures with various thicknesses. The minimum thickness of the InAlAs layer distinguished by the KFM was 40 nm.