The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge Reaction

Abstract

Silicon nitride was deposited by a radio frequency glow discharge reaction of silane and ammonia. Films were deposited at a fixed substrate temperature of 300°C but the silane/ammonia concentration was varied between 3 and 50%. The effect of changing gas concentrations has been correlated with the change in physical and electrical properties of the deposited material. In particular, measurements of dielectric constant, loss factor, and voltage breakdown strength have been made as well as surface studies by the MOS technique. Material properties have also been qualitatively studied by monitoring IR absorption, chemical etch rate, and film growth rate.