Journal of The Electrochemical Society · 1967 · 71 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsDevice CharacterizationElectronic Material CharacterizationSemiconductor Device MaterialsSilicon MaterialsThin Film Electrical PropertiesThin-film DepositionBreakdown StrengthElectrical Breakdown StrengthElectrical PropertiesEtch ChemistryEtch RateSilicon NitrideSilicon Thin FilmsSubstrate Temperature Effects
Silicon nitride was deposited by a radio frequency glow discharge reaction of silane and ammonia. Films were deposited at a fixed substrate temperature of 300°C but the silane/ammonia concentration was varied between 3 and 50%. The effect of changing gas concentrations has been correlated with the change in physical and electrical properties of the deposited material. In particular, measurements of dielectric constant, loss factor, and voltage breakdown strength have been made as well as surface studies by the MOS technique. Material properties have also been qualitatively studied by monitoring IR absorption, chemical etch rate, and film growth rate.