Applied Physics Letters · 2005 · 56 citations · 9 references
Temperature Range 7–450KEpitaxial Lift-offEngineeringGainp∕gaas HeterostructuresLaser ApplicationsLift-off Processing InhibitsOptoelectronic DevicesInterface Recombination VelocitySemiconductorsSemiconductor LasersMolecular Beam EpitaxyPulsed Laser DepositionEpitaxial GrowthCompound SemiconductorMaterials SciencePhotonicsElectrical EngineeringSemiconductor TechnologyPhotoluminescenceApplied PhysicsLaser CoolingMultilayer HeterostructuresOptoelectronics
Photoluminescence of GaAs passivated with GaInP is studied over the temperature range 7–450K. Different photocarrier recombination mechanisms are identified as the temperature changes. An interface recombination velocity of less than 0.6cm∕s is measured at 300K. Lift-off processing inhibits but does not preclude laser cooling of GaAs.
9