IEEE Transactions on Nuclear Science · 1974 · 12 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice CharacterizationDevice ModelingMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityThreshold ModelingDose-rate EffectsInvertersMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingRadiation Effects On ReliabilityRadiation-tolerant Semiconductor DevicesTotal Ionizing Dose Effects
The linear sapphire photoconductance approximation was used to model dose-rate effects in CMOS/SOS inverters. From this model, optimum values were derived for the ratio of n-channel to p-channel transistor gate width, thereby maximizing the dose-rate failure threshold.