Concepedia

Measurements of the lateral spread of heavy ions implanted into silicon

W. A. Grant, J. S. Williams, D. J. Dodds

Radiation Effects · 1976 · 12 citations · 9 references

DOI

Concepts

Abstract

"Measurements of the lateral spread of heavy ions implanted into silicon." Radiation Effects, 29(3), pp. 189–190

References

9

Range and stopping-power tables for heavy ions

L. C. Northcliffe, Roland Schilling · Atomic Data and Nuclear Data Tables · 1970 · 2.7K citations

, , +13

The optimization of a rutherford backscattering geometry for enhanced depth resolution

J. S. Williams · Nuclear Instruments and Methods · 1975 · 96 citations

, , +8

Backscattering study on lateral spread of implanted ions

Seijiro Furukawa, Hideki Matsumura · Applied Physics Letters · 1973 · 71 citations

, , +5

The stopping of 4He ions in elemental matter

J. F. Ziegler, W. K. Chu · Thin Solid Films · 1973 · 41 citations

, , +12

Range parameters of heavy ions at 10 and 35 keV in silicon

A. Feuerstein, S. Kalbitzer, H. Oetzmann · Physics Letters A · 1975 · 28 citations

, , +12