Optical properties and structural characteristics of semiconductor-doped oxide gels

Thierry Gacoin, Cyrille Train, Fréderic Chaput, Jean‐Pierre Boilot, Pascal Aubert, M. Gandais, Yangshu Wang, André Lecomte

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1992 · 17 citations · 0 references

Concepts

Abstract

CdS and PbS semiconductor nanoclusters (2 - 10 nm) are produced by using direct precipitation, (gamma) -radiolysis and reversed micelles. A chemical capping reaction is made at the cluster surface by thiolate complexes. The structure and the size of the capped clusters are determined by Optical Absorption, X-ray Diffraction, Small Angle X-ray Scattering and High Resolution Electron Microscopy. After grafting of a gel precursor at the cluster surface, PbS and CdS particles can be incorporated in optically clear and dense oxide gels prepared by hydrolysis of metal alkoxides in a wet atmosphere.