Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 27 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor DevicesIii-v SemiconductorsLight SourcesLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresCurrent DensityGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesHydride Vapor Phase EpitaxyLight-emitting DevicesUltraviolet Light-emitting Diodes
Abstract In this paper, we present results on development of ultraviolet light‐emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al 2 O 3 (0001) substrates by chloride‐hydride vapour phase epitaxy (CHVPE). Both packaged and unpackaged UV LED dies were fabricated. The peak wavelengths of dies were in the range of 360–365 nm with a typical FWHM of 10–13 nm. UV LEDs proved performance capability at current density up to 125 A/cm 2 . (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)