Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates

Abstract

Luminescence properties of GaAs/AlGaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on V-grooved substrates are reported. A model of the crescent-shaped wires yields parabolic QWR potential wells with subbands separated by 21.7, 3.9, and 16.7 meV for electrons, heavy holes, and light holes and effective width of 16 nm for the ground electron state. Spectrally and spatially resolved cathodoluminescence images reveal highly uniform emission from the QWR regions. Photoluminescence excitation spectra exhibit enhanced absorption at the QWR subbands, with subband separations in good agreement with the model.