Characterization of new FBK SiPM technology for visible light detection

Abstract

This paper presents the characterization of the new n-on-p SiPM technology developed at Fondazione Bruno Kessler (FBK, Trento-Italy). Several device aspects such as dark count rate, photo detection efficiency, breakdown voltage uniformity, and temperature stability have been significantly improved with respect to the original FBK SiPM technology. The modifications introduced involve the internal device structure and are based on an electric-field engineering approach. We report on the dark characterization, the visible light detection efficiency and 511 keV gamma ray energy resolution, when reading out small LYSO or Ce:GAGG crystals, of the new devices. In parallel, a comparison to the original SiPMs is done in order to underline the main advancements that have been obtained. We refer this new technology to as RGB-SiPMs because of the high detection efficiency for the whole red, green, and blue part of the spectrum.