Japanese Journal of Applied Physics · 2003 · 33 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceMaterials CharacterizationSemiconductor MaterialsThin FilmsGrain GrowthGrain Structure FormationSemiconductor Crystal GrowthSemiconductor SurfacesSilicon MaterialsThin-film MaterialsCrystalline SiliconDiffraction PatternsElectron Backscatter DiffractionExcimer LasersGrain SelectionGrain StructureSiliconSilicon Thin Films
We investigated the texture of excimer-laser crystallized Si film. For the first time, Si thin films with more than 96% (100) texture have been produced using excimer-laser crystallization of a-Si on a glass substrate. The (100) textured film has rectangular grains with edges parallel to the (110) direction. Results of scanning electron microscopy (SEM), electron backscatter diffraction patterns (EBSP), X-ray diffraction and transmission electron microscopy (TEM) are presented. The results are interpreted on the basis of Si/SiO2 interface energy and a new grain-selection model.
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