Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy

Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

M. A. Herman, D. Bimberg, Jennifer Blain Christen · Journal of Applied Physics · 1991 · 288 citations

Engineering, Materials Engineering, Materials Science +17

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

Z. Y. Xu, Zhengdong Lu, Xiaoping Yang et al. · Physical review. B, Condensed matter · 1996 · 224 citations · Full text

Engineering, Materials Science, Physics +17

Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

Chi‐Kuang Sun, G. Wang, John E. Bowers et al. · Applied Physics Letters · 1996 · 166 citations

Engineering, Materials Science, Physics +17

Optical investigation of the self-organized growth of InAs/GaAs quantum boxes

Jean‐Michel Gérard, J. B. Genin, J. Lefebvre et al. · Journal of Crystal Growth · 1995 · 126 citations

Natural Sciences, Materials Science, Physics +15

Temporal evolution of GaSb/GaAs quantum dot formation

L. Müller‐Kirsch, R. Heitz, Udo W. Pohl et al. · Applied Physics Letters · 2001 · 83 citations

Natural Sciences, Materials Science, Physics +17