Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012 · 15 citations · 17 references
EngineeringColloidal NanocrystalsOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorPhotodetectorsQuantum DotsQuantum MaterialsMolecular Beam EpitaxyQuantum Dot StructuresCompound SemiconductorNanophotonicsSingle Layer Gasb/gaasSurface ReconstructionMaterials ScienceDefect-free Gasb/gaasPhotoluminescenceCrystalline DefectsNanotechnologyOptoelectronic MaterialsSemiconductor MaterialNanomaterialsSurface ScienceApplied Physics
Multilayer and single layer GaSb/GaAs(001) quantum dot structures were grown on an Sb-terminated (2 × 8) surface reconstruction and compared to those grown on an As-terminated (2 × 4) surface reconstruction. Uncapped quantum dots grown on the (2 × 8) surface were approximately 25% smaller in diameter and had a larger width/height aspect ratio. Quantum dots grown on both surfaces were defect free at the quantum dot/spacer layer interface. The dots did not appear to be fully compact when imaged by transmission electron microscopy, which may be due to dissolution and/or quantum ring formation. The quantum dot photoluminescence peak for dots grown on the (2 × 8) surface was brighter but at the same energy as that of dots grown on the (2 × 4) surface. This was likely the result of a higher areal density of dots on the (2 × 8) surface and a lower tendency for them to intermix during capping, resulting in dots of similar size for both samples after capping. Quantum dots grown on the (2 × 8) surface also displayed greater morphological stability when quenched in the absence of Sb.
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Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
Qianghua Xie, A. Madhukar, Ping Chen et al. · Physical Review Letters · 1995 · 1.3K citations
Radiative recombination in type-II GaSb/GaAs quantum dots
Fariba Hatami, N. N. Ledentsov, Marius Grundmann et al. · Applied Physics Letters · 1995 · 324 citations