Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Abstract

Abstract N‐type hydrogenated microcrystalline silicon oxide (μc‐SiO x :H) layers were used as window layers in n‐side illuminated microcrystalline silicon n–i–p solar cells. Optical, electrical and structural properties of μc‐SiO x :H films were investigated by Photothermal Deflection Spectroscopy, conductivity and Raman scattering measurements. μc‐SiO x :H layers were prepared over a range of carbon dioxide (CO 2 ) flow and film thickness, and the effects on the solar cell performance were investigated. By optimising the μc‐SiO x :H window layer properties, an improved short‐circuit current density of 23.4 mA/cm 2 is achieved, leading to an efficiency of 8.0% for 1μm thick absorber layer and Ag back contact. The correlation between cell performance and μc‐SiO x :H layer properties is discussed. The results are compared to the performance of solar cells prepared with alternative optimised window layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)