Electrical resistivity of Au-ZnO nanocomposite films

Abstract

The electrical resistivity of electron beam codeposited gold and zinc oxide (Au-ZnO) films was investigated over the full composition range. The electrical resistivity was shown to increase monotonically with increasing ZnO content, with three characteristic regimes of behavior associated primarily with (1) grain boundary electron scattering due to grain refinement at ZnO volume fractions below 0.3, (2) percolation theory for ZnO volume fractions at and above the percolation threshold (fc = 0.85), and (3) a transition region between these where it was proposed that resistivity was influenced by the formation of Au-Zn complexes due to an oxygen deficiency in the deposited ZnO. The electrical resistivity of the composite films remained below 100 μΩ cm for ZnO volume fractions below 0.5. A model combining the general effective media equation and Mayadas-Shatzkes grain boundary electron scattering model was shown to generally describe the composition dependence of electrical resistivity for the investigated oxide dispersion hardened metal-matrix composite thin films.