Low leakage of In0.83Ga0.17As photodiode with Al2O3/SiNx stacks

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

M. L. Huang, Yen‐Chung Chang, Chih‐Ju Chang et al. · Applied Physics Letters · 2005 · 331 citations

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Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors

S. M. Johnson, David R. Rhiger, J. P. Rosbeck et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 205 citations

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Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

Marko Milojević, F. S. Aguirre‐Tostado, Christopher L. Hinkle et al. · Applied Physics Letters · 2008 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +17

Extended wavelength InGaAs infrared (1.0–2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere

Ruud W. M. Hoogeveen, Ronald van der A, Albert P. H. Goede · Infrared Physics & Technology · 2001 · 136 citations

Natural Sciences, Aerospace Engineering, Earth Sciences +17

Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

Chia-Yuan Chang, Yen-Lung Chiou, Yu‐Cheng Chang et al. · Applied Physics Letters · 2006 · 123 citations

Engineering, Materials Engineering, Materials Science +17