Physical Review Letters · 2008 · 79 citations · 23 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsInterface ScienceSurface ScienceElectrical ConductivityElectronic Transport ModelingMetal-semiconductor ContactsQuantum TunnelingSemiconductor PhysicsBarrier HeightsConductanceDifferential ResistanceNumerical Device SimulationNumerical SimulationQuantum Tunneling EffectsTunneling BarriersTunneling Phenomena
We observed the transition from negative differential resistance (NDR) to the absence of NDR in the differential conductance (dI/dV) spectra of single copper-phthalocyanine (CuPc) molecules adsorbed on one, two, and three atomic layers of NaBr grown on a NiAl(110) substrate. Through numerical simulation, this transition is attributed to two phenomena in the double-barrier tunnel junction: (i) the opposite bias dependence of the vacuum and NaBr barrier heights, and (ii) the changing barrier widths for CuPc molecules adsorbed on different layers of NaBr.
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Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations