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Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells
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References
2015
Year
Aluminium NitrideWide-bandgap SemiconductorJ. ApplEngineeringSub Micron InhomogeneitiesBibliometricsQuantum MaterialsPhysicsAluminum Gallium NitrideCategoryiii-v SemiconductorNuclear AstrophysicsCosmic AbundanceExperimental Nuclear PhysicsJournal Citation ReportNatural SciencesApplied PhysicsCondensed Matter PhysicsRyan G. BanalOptoelectronics
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Yoshiya Iwata, Takao Oto, David Gachet, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami; Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells. J. Appl. Phys. 21 March 2015; 117 (11): 115702. https://doi.org/10.1063/1.4915533 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search
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