Imaging the strain fields resulting from laser micromachining of semiconductors

Abstract

The residual strain fields resulting from laser micromachining of grooves in indium phosphide with femtosecond and nanosecond light pulses are analyzed using a spatially resolved degree-of-polarization photoluminescence technique. Significant differences in the geometry of the strain patterns are observed in grooves machined by femtosecond and nanosecond pulses. For the specific conditions investigated, the sign of the degree of polarization signal is opposite in the two cases indicating that areas under tension in femtosecond machined samples are under compression in nanosecond machined samples and visa versa. The experimental data are compared with results from a finite element model.