Distribution of atoms in mixed III-V compounds

Abstract

In mixed III-V semiconductors, AB1−xCx, the atoms are supposed to be randomly distributed. Using resonant Raman scattering as a probe, we determined the departure from a random distribution inside small volumes of the order of V≂(50 Å)3. It has been shown that the frequency splitting of the vibrational modes in the allowed and forbidden configuration can be attributed to the deviation from the nominal composition x within the characteristic volume of the electron-phonon interaction.