Complementary Symmetry Silicon Nanowire Logic: Power‐Efficient Inverters with Gain

Abstract

Wired for high performance: The role of relative surface area in Si nanowire (NW) transistor (see image) performance was examined by comparing the performance of microwire (μW) field-effect transistors (FETs) fabricated side-by-side with NW FETs. Both n- and p-type NW FETs were found to be more sensitive to surface states than their μW counterparts; these results are utilized to produce NW n-FETs with consistent performance.