IEEE Journal of Quantum Electronics · 1966 · 28 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical AmplifiersOptical Properties Of SemiconductorsOptoelectronic DevicesSemiconductor LasersHigh-power Optical AmplifiersLaser AmplifiersNoise Equivalent PowerOptical GainOptical Gain In SemiconductorsSemiconductor Laser DiodesSemiconductor Optical AmplifiersSingle-mode Operation
The infrared GaAs injection amplifiers described have gains as high as 2000 and give output powers of 150 milliwatts when operating at 77°K and driven by a single mode. Output efficiencies of 68 percent differentiial and 50 percent overall can be obtained if the amplifier is driven by light of spectral width equal to the band-pass of the amplifier (30 Å). Regenerative effects are minimized by coating the diodes with three-fourth wavelength coatings of SiO. Thresholds at liquid nitrogen temperature were raised by a factor of ten on some diodes after the coatings were applied. Experimental data obtained on gain, efficiency, spectra, beamwidth, and noise power of several amplifiers are summarized and presented.