Applied Physics Letters · 1995 · 51 citations · 0 references
Optical MaterialsEngineeringLaser ApplicationsLaser MaterialChemistryLuminescence PropertySpectroscopic PropertyBand GapIi-vi SemiconductorOptical PropertiesCompound SemiconductorMaterials SciencePhotoluminescencePhotonic MaterialsOptoelectronic MaterialsSemiconductor MaterialOptical ActivityCrystallographyGreat Optical ActivityApplied PhysicsCrystalsOptoelectronics
Great optical activity is realized by a vacancy ordered III2VI3 compound (Ga0.3In0.7)2Se3 with point group 6 which is based on wurtzite structure and characterized by the screw arrangement of cation atoms along the c axis. The transition of the fundamental absorption edge is direct and the band gap is estimated to be 2.05 eV. An anomalous optical rotatory dispersion around the absorption edge is observed and the maximum rotatory power of 125°/mm is obtained at λ=620 nm. The optical activity for red light is always above 60°/mm, that is 4–6 times as large as that of α quartz. (Ga0.3In0.7)2Se3 single crystal is very useful, especially for the He–Ne laser as an optically active substance; the rotatory power reaches 103°/mm, being more than 5 times of α quartz.