Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations

Engineering, Chemistry, Materials Science +12

Precision, accuracy, and uncertainty in quantitative surface analyses by Auger-electron spectroscopy and x-ray photoelectron spectroscopy

C. J. Powell, M. P. Seah · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 253 citations

Natural Sciences, Materials Engineering, Materials Science +17

Chemical vapor deposition of titanium nitride at low temperatures

Sarah Kurtz, Roy G. Gordon · Thin Solid Films · 1986 · 221 citations

Natural Sciences, Materials Engineering, Materials Science +12

Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering

Tadashi Shiosaki, Tomoko Yamamoto, Tomoyuki Oda et al. · Applied Physics Letters · 1980 · 165 citations

Natural Sciences, Materials Engineering, Materials Science +15

Preparation and Properties of Aluminum Nitride Films Using an Organometallic Precursor

Leonard V. Interrante, Wei Lee, M. D. McConnell et al. · Journal of The Electrochemical Society · 1989 · 113 citations

Natural Sciences, Materials Engineering, Materials Science +16