Molecular Beam Epitaxy of BaSi₂ Films with Grain Size over 4 µm on Si(111)

Abstract

100-nm-thick BaSi 2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). The Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi 2 was significantly dependent on the RDE growth conditions and was varied from approximately 0.2 to more than 4 µm.