Single mode stimulated emission from prismlike gallium nitride submicron cavities

Abstract

The authors report single mode stimulated emission from optical pumping of prismlike gallium nitride (GaN) with a side length of 0.75μm. The cavities were formed by reaction-rate-limited photoetching that preserved the nonpolar {101¯0} or {112¯0} facets. They were characterized by an average quality factor above 103 and an equivalent facet reflectivity exceeding 98%, which allowed field amplification by repeated internal reflections in the transverse plane and field polarization along the c axis. Slight spectral blueshift (0.35nm) and narrowing in linewidth (∼0.4nm) were observed with increase of pump intensity. These observations manifested resonant coupling of the band edge emission to a single mode of the prismlike GaN cavity.