Zinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnO

Abstract

Zinc oxide (ZnO) is one of the most promising transparent conducting oxides for use in electronics, but to realize its potential we must better understand how its semiconductor physics depends on its material properties, particularly the interaction of defects with dopants. This study identifies the Al${}_{Z\phantom{\rule{0}{0ex}}n}$-${V}_{Z\phantom{\rule{0}{0ex}}n}$ complex as a defect of crucial and general importance that limits the $n$-type doping efficiency and thus the performance of ZnO. Similar effects are anticipated for other shallow $n$-type dopants as well.