Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride

Abstract

We report on the identification of a tri-carbon defect in AlN bulk crystals grown by physical vapor transport. The defect gives rise to a single infrared absorption line at 1769 cm−1 in unintentionally carbon doped crystals. This line splits into eight lines in crystals enriched with the carbon isotope 13C. The observed line patterns can unambiguously be assigned to a local vibrational mode of a defect that contains exactly three carbon atoms. The most probable arrangement of the three carbon atoms is on nearest-neighbor substitutional sites, replacing two nitrogen atoms and one aluminum atom, whereby one carbon-carbon bond is directed non-parallel and the other parallel to the crystal's c axis. It is suggested that the tri-carbon defect can exist in three different charge states (neutral, singly negative, and doubly negative) and hence possesses two transition levels within the band gap. This energy level scheme explains the appearance and disappearance of the local vibrational mode in dependence on the Fermi level position as well as a similar appearance-disappearance behavior of a strong ultraviolet absorption band at 4.7 eV that has been repeatedly reported in the literature. We propose that the singly negative charge state of the tri-carbon defect essentially contributes to that ultraviolet absorption.