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SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications

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References

2010

Year

Abstract

SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3-2.7 GHz operation with <;4% EVM and 18% efficiency while meeting spectral mask and exhibiting -43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3-2.4 GHz) and FDD-LTE, Band 7 (2.500-2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.

References

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