IEEE Transactions on Microwave Theory and Techniques · 1993 · 18 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsDoping EffectsDoping Profile AnalysisMicrowave DevicesMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsPower OutputSchottky Barrier DiodesVaractor Diodes
A 94-GHz monolithic microwave integrated circuit (MMIC) frequency doubler with 25% efficiency and 65-mW output power is discussed. Variations in the Schottky-barrier varactor diode's performance as a doubler with its geometry and doping profile are analyzed for optimum efficiency and output power. Optimum doubler performance is obtained by use of the optimized diode parameters resulting from this analysis. Measured diode parameters as well as doubler responses show excellent agreement with the analysis.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
6
High speed semiconductor devices
III-Vs Review · 1991 · 533 citations
Engineering, Computer Engineering, Electrical Engineering +12
Journal of the Franklin Institute · 1963 · 333 citations