Physical Review Letters · 1967 · 60 citations · 3 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsOptoelectronic MaterialsSemiconductor PhysicsSemiconductor SurfacesThermal Properties Of SemiconductorsWide Band Gap SemiconductorsCarrier Relaxation DynamicsConduction BandLow-band-gap SemiconductorsPhotocarrier DynamicsUltrafast Carrier Dynamics
Electrons photoexcited in ${p}^{++}$-GaAs (with Cs surface monolayer) are found to "thermalize" in either the $\ensuremath{\Gamma}$ or $X$ conduction-band minima while diffusing to the surface. Two strong peaks separated by 0.3 eV of photoemitted electrons associated with these minima are observed in the energy distribution curves for $1.5 \mathrm{eV}<~h\ensuremath{\nu}<~3.2 \mathrm{eV}$.
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GaAs-Cs: A new type of photoemitter
Jens Scheer · Solid State Communications · 1965 · 273 citations