Violet and Near-UV Light Emission from GaN/Al_0.08Ga_0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy

Abstract

GaN/Al 0.08 Ga 0.92 N double-heterostructure (DH) was grown on (0001)-oriented 6H-SiC substrate by low-pressure metal-organic vapor phase epitaxy (LP MO-VPE). The main peak wavelength at room temperature from GaN/Al 0.08 Ga 0.92 N DH injection diode was 420 nm which originated in the band-to-impurity transition in GaN. A weak peak at 360 nm was also observed.