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The temperature dependent part of the impurity resistivity in aluminium alloys with germanium
15
Citations
19
References
1974
Year
Aluminium NitrideEngineeringTemperature Dependent PartAlloysMaterials ScienceMaterials EngineeringIntrinsic ImpurityElectrical PropertyPhonon ResistivityMicrostructureSpecific ResistanceApplied PhysicsCondensed Matter PhysicsDerivative Delta DeltaAlloy DesignAluminium AlloysImpurity ResistivityAlloy PhaseElectrical Resistivity
Values of the electrical resistivity of polycrystalline Al-Ge alloys with different solute concentrations have been measured from 4.2-320K. It is found experimentally that the phonon resistivity of the alloys in the temperature region 10-60K varies as T2<n<3.6. At intermediate temperatures the deviation from Matthiessen's rule passes through a maximum which shifts to higher temperatures with concentrations as c15/. At high enough temperatures the sign of the derivative delta Delta (T)/ delta T is negative. The results obtained experimentally are compared with theory.
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