Japanese Journal of Applied Physics · 1970 · 255 citations · 7 references
Thin Film PhysicsEngineeringThin Film Process TechnologySurface TechnologyTemperature CoefficientThin Film ProcessingThin-film TechnologyMaterials ScienceThin Metal FilmsFilm ResistivityThin Film MaterialsRough SurfaceSemiconductor MaterialElectrical PropertySurface CharacterizationSpecific ResistanceFilm ThicknessSurface ScienceApplied PhysicsSurface EngineeringThin Film DevicesThin Films
The authors propose a theory that incorporates surface roughness, alongside reduced mean free path, to predict thin metal film resistivity. They introduce the roughness‑to‑mean‑free‑path ratio, h/λ, as a key parameter in this model. The theory reproduces the Fuchs‑Sondheimer result when h/λ = 0, shows increasing deviation for h/λ > 0 as film thickness decreases, and matches experimental data by adjusting h/λ.
The thickness dependence of resistivity and its temperature coefficient of thin metal films has been studied. A theory is proposed to include, the surface roughness in determining the film resistivity, in addition to the reduced mean free path to conduction electrons. The ratio of the roughness to the mean free path, h /λ, is introduced as a convenient parameter. The thickness dependence of the resistivity predicted by the present theory agrees with the well known Fuchs-Sondheimer theory if h /λ=0. If h /λ>0, the discrepancy between the two theories increases with the decrease in film thickness. Satisfactory agreement between the theoretical and experimental results can be obtained by adjusting the value of h /λ.
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The mean free path of electrons in metals
E. H. Sondheimer · Advances In Physics · 1952 · 2.6K citations