Single-Source Chemical Vapor Deposition of SiC Films in a Large-Scale Low-Pressure CVD Growth, Chemical, and Mechanical Characterization Reactor

Abstract

The development and characterization of a silicon carbide deposition process from a single source precursor, 1,3-disilabutane, in a large-scale reactor is described. Deposition was performed simultaneously on fifteen, Si wafers in a 4 or wafer-capable horizontal low-pressure chemical vapor deposition reactor. Amorphous is obtained at temperatures of and below, while some polycrystallinity is obtained at temperatures of and above. Highly uniform and relatively smooth films are realized using a closed wafer boat. A maximum growth rate of is attained at . Residual stress in the film is characterized and found to be greater than (tensile) across a wide range of deposition temperatures. Stress profiling is performed to investigate the stress distribution throughout the films. Microfabrication on the wafer level using as a structural layer is also demonstrated.