Applied Physics Letters · 2012 · 41 citations · 11 references
EngineeringMaterials ScienceElectronic MaterialsRadiation DetectionRadiation PhysicsDetector TechnologyInfrared DetectorsPhotodetectorsRadiation Damage In MaterialsRadiation DetectorsSemiconductor DetectorsDark CurrentDetector Quantum EfficiencyIonizing IrradiationQuantum EfficiencyRadiation Damage EffectsRadiation Damage In DetectorsRadiation ToleranceRadiation-tolerant Semiconductor Devices
The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence ΦP up to 3.75 × 1012 cm−2 or, equivalently, a total ionizing dose = 500 kRad (Si). At this ΦP, an ∼31% drop in quantum efficiency η, ∼2 order increase in dark current density JD, and consequently, >1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for η and D*. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation.
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