Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe

Abstract

A photoluminescence microprobe technique with ≤0.2 °C and <5 μm resolution is demonstrated for measuring lateral temperature profiles in GaAs-based optoelectronic devices. The technique is used to measure the junction-heating induced temperature gradient in both single-stripe and broad-area diode lasers. The effective focal length of the thermally induced refractive index gradient lens is determined from the temperature gradient in a broad-area device.