Surface electronic structure of InSb(1¯ 1¯ 1¯)3×3 studied by angle-resolved photoelectron spectroscopy and scanning tunneling microscopy

Abstract

Valence-band spectra from the sputtered and annealed InSb(1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{})3\ifmmode\times\else\texttimes\fi{}3 surface in normal emission and in the \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{} M\ifmmode\bar\else\textasciimacron\fi{}, \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{} M\ifmmode\bar\else\textasciimacron\fi{}', and \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{} K\ifmmode\bar\else\textasciimacron\fi{} azimuths have been measured. Some possible surface bands have been identified, among them one that clearly reflects the 3\ifmmode\times\else\texttimes\fi{}3 periodicity of the surface. Core-level spectra of Sb 4d and In 4d were deconvoluted revealing one surface-shifted component for Sb 4d and, surprisingly, no pronounced surface-shifted component for In 4d. Scanning tunneling microscopy images from this surface taken at different biases are presented. It is argued that the surface imaged at high bias is perturbed by the tip.