Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition - Concepedia

Concepedia

Publication | Closed Access

Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

24

Citations

12

References

2006

Year

Mohamad Soueidan, Gabriel Ferro, B. Nsouli, François Cauwet, J. Dazord, Ghassan Younes, Y. Monteil

Materials Science and Engineering B

Materials EngineeringMaterials ScienceEngineeringApplied Physics6H-sic SubstrateChemical Vapor DepositionCarbideGrowth Parameters

References

	Year	Citations

Page 1