Redistribution of oxygen within damage regions of boron-implanted silicon

Abstract

The redistribution and gettering of 16O in Si within boron-implanted regions has been investigated using transmission electron microscopy and secondary-ion mass spectrometry profiling. It has been shown that low-temperature (⩽ 600 °C) secondary annealings following normal high-temperature (900–1000 °C) annealing result in the rapid diffusion and gettering of oxygen within residual damage regions. The gettered oxygen is present in the form of SiOx precipitates stabilized along dislocations lines and residual damage structure.